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Physicochemical Properties of Chemical Vapor‐Deposited Silicon Oxynitride from a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System
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1978
Year
‐ H 2EngineeringOxidation ResistanceThin Film Process TechnologyChemistrySilicon On InsulatorChemical EngineeringSiliceneThin Film ProcessingMaterials ScienceMaterials EngineeringFilm StressHydrogenSurface ScienceApplied Physics‐ Nh 3Amorphous SiliconThin FilmsAmorphous SolidChemical Vapor DepositionPhysicochemical Properties
The physicochemical properties of amorphous silicon oxynitride films deposited from a system have been investigated. The properties of CVD and deposited from and , respectively, were also investigated, wherever appropriate, to determine the end points of the series. The film stress is a continuous, approximately parabolic function of silicon oxynitride composition. The composition also determines its resistance to oxidation in steam (950°–1100°C). It is shown that a ∼500Å thick film with the composition of is an adequate barrier to steam oxidation for 6 hr at 1000°C. The etch rate of films is a function of composition in 7:1 BHF. In refluxing, a peak in etch rate exists at a film composition of ∼64% equivalent. films deposited between 900° and 1000°C densify 2–3% after "heat‐treatment" at 1000°C for 2 hr and their etch rates decrease by ∼50%; whereas the stress increases (more tensile) as a result of heat‐treatment.