The valence-excited states T1–T4 and S1–S2 of acetylene: A high-level MR-CISD and MR-AQCC investigation of stationary points, potential energy surfaces, and surface crossings

Abstract

Valence-excited singlet (S1,S2) and triplet (T1–T4) states of acetylene have been studied by means of extended multireference electron correlation techniques (MR-CISD, MR-CISD+Q, and MR-AQCC). Extrapolations to the basis set limit have been performed. Minima and saddle points have been calculated using a recently developed analytic gradient method for excited states. Planar as well as nonplanar structures have been considered. In particular, the existence of an asymmetric, planar cis-type minimum on the S2 surface has been confirmed conclusively. Moreover, an intersection S1/S2 has been located close to this minimum. This situation will most probably affect the interpretation of the absorption bands attributed to the trans 1 1Bu state. In-plane and out-of-plane saddle points for cis–trans isomerization have been determined and characterized by harmonic vibrational analysis. Several interesting surface crossings for different electronic states (S1/S2, T2/T3, and S1/T3) have been characterized. Implications of the flatness of the T3 surface around linear structures and the location of the S1/T3 crossing seam on the anomalities observed in the ZAC spectrum of the à 1Au state are discussed.