Applied Physics Letters · 1998 · 49 citations · 12 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsThin FilmsMagnetic OxidesMagnetic Properties Of SolidsMagnetic Thin FilmsMagnetism In SolidsSpintronicsThin Film Magnetic PropertiesDisorderElectron TunnelingFilm DepositionGrain BoundariesMagnetization In Thin FilmsMagnetoresistanceSpin TunnelingThin Film Magnetism
The magnetoresistance of mechanically induced grain boundaries in La0.7Ca0.3MnO3 thin films is investigated. The grain boundaries are fabricated by a mechanical deformation of the LaAlO3 substrate prior to film deposition. During film deposition, the deformed substrate region induces some growth disorder in the film leading to a wide grain boundary. The resulting structures show a reproducible, substantial magnetoresistance in magnetic fields below 2 kG. We discuss the temperature and direction dependence of the magnetoresistance and argue that two contributions due to spin-polarized electron tunneling and the suppression of magnetic frustration by a magnetic field can be identified.
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Magnetoresistance of magnetite
J. M. D. Coey, A. E. Berkowitz, Ll. Balcells et al. · Applied Physics Letters · 1998 · 376 citations
Low-field colossal magnetoresistance in manganite tunnel spin valves
M. Viret, M. Drouet, Joaquim Nassar et al. · Europhysics Letters (EPL) · 1997 · 288 citations
Natural Sciences, Materials Engineering, Materials Science +17