Novel SiO/sub 2/AlN/HfAlO/IrO/sub 2/ memory with fast erase, large ΔV/sub TH/ and good retention

Abstract

Using the strong trapping capability of novel AlN (k=10), low voltage drop in high-K layers and high workfunction IrO/sub 2/ with low leakage current, the SiO/sub 2//AlN/HfAlO(k=17)/IrO/sub 2/ device shows good 85/spl deg/C memory integrity of fast 100/spl mu/s erase, large 3.7V /spl Delta/V/sub th/ and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V /spl Delta/V/sub th/ and 3.4V for 85/spl deg/C 10-year retention at 1ms erase.