Publication | Closed Access
Improved Diode Geometry for Planar Heterostructure Barrier Varactors
10
Citations
9
References
1999
Year
Electrical EngineeringTripler EfficiencyEngineeringNew DesignRf SemiconductorNanoelectronicsElectronic EngineeringDiode GeometryApplied PhysicsPower Semiconductor DeviceOutput PowerMultilayer HeterostructuresPower ElectronicsMicroelectronicsOptoelectronicsCategoryiii-v SemiconductorSemiconductor Device
We report state-of-the-art performance of tripler efficiency and output power for a new design of AlGaAs-based heterostructure barrier varactor diodes. The new diodes were designed for reduced thermal resistance and series resistance. An efficiency of 4.8% and a maximum output power of 4 mW was achieved at an output frequency of 246 GHz.
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