TUbilio (Technical University of Darmstadt) · 1997 · 10 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave MixersMicrowave Semiconductor DevicesTerahertz SpectroscopyWide-bandgap Semiconductor DevicesDiode MixersFabricationMultiplier DesignSchottky Barrier DiodesSkin Effect LossesTerahertz Semiconductor Devices
Although planar Schottky diodes have been significantly improved, whisker contacted Schottky diodes still dominate as nonlinear devices in mixer and frequency multiplier applications in the submillimeter regime. Because of the skin effect the performance of whisker contacted Schottky diodes above 1 THz is limited A novel device structure of a whisker contacted schottky diode, the substrateless Schottky diode, was proposed in 1995 [1] and the final fabrication process was defined in 1996 [2]. This structure improves some shortcomings of whisker contacted Schottky diodes. This paper presents the state-of-the-art development of this structure and discusses recent multiplier results. Tripler efficiencies of 12% (6mW) at 279 GHz and 6.7% (1mW) at 474 GHz show that the substrateless Schottky diode extends the capabilities of whisker contacted Schottky diodes in the THz regime.
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