Photo-induced insulator-metal transition of silicon-based VO2 nanofilm by THz time domain spectroscopy

Abstract

The photo-induced insulator-metal transition for silicon-based VO2 nanofilm is studied by THz time-domain spectroscopy (THz-TDS). Obvious variations of THz ray transmittance are observed before and after the CW laser beam exciting, and the conductivity of metallic-phased VO2 film in the THz region is calculated in the thin film approximation. According to the measured results, the metallic-phased VO2 film is characterized equivalently with Drude’s model, and complex conductivity, dielectric function and refractive index are acquired by the model. As an examination on the equivalent Drude model, numerical simulation based on the finite integral method in time domain is carried out. The results show that they are in good agreement with the experimental results. This work provides a reference for the study on phase transition of VO2 nanofilm and its application in the THz region.