1997 · 11 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesConverter TopologiesGate Drive CircuitsIntegrated Circuit DesignPower ManagementPower SystemsWide-bandgap Semiconductor DevicesAnode DesignConverter Topology DesignInverter SystemsPower Electronics DevicesStorage
Abstract: The IGCT technology (Integrated Gate-Commutated-Thyristor), which is based on the concept of the hard driven GTO, reduces inherently the storage time of the turn-off device to 1us and allows the robust series connection of high power turn-off devices. The homogenous operation, especially during turn-off, allows the reduction or even elimination of the dv/dt snubber. Together with an improved device design (buffer layer, transparent anode) the inverter losses and costs are dramatically reduced. The first application of this technology in a 100 MVA intertie based on the 1st generation of series connected IGCTs is discussed and operational experience is presented.
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