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Investigation on material selection for gate dielectric in nanocrystalline silicon (nc-Si) top-gated thin film transistor (TFT) using Ashby’s, VIKOR and TOPSIS

Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringNanotechnologyApplied PhysicsMaterial SelectionNanocrystalline SiliconSemiconductor Device FabricationThin Film Process TechnologyThin FilmsGate DielectricSemiconductor Device