Z. G. Xing

White light-emitting diodes based on a single InGaN emission layer

X. H. Wang, Haiqiang Jia, L. W. Guo et al. · Applied Physics Letters · 2007 · 59 citations

Engineering, Luminescence Property, Nanoelectronics +16

Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer

X. H. Wang, L. W. Guo, Haiqiang Jia et al. · Applied Physics Letters · 2009 · 41 citations

Engineering, Control Performance, Light-emitting Diodes +17

Fabrication of Patterned Sapphire Substrate by Wet Chemical Etching for Maskless Lateral Overgrowth of GaN

Jing Wang, L. W. Guo, Huimin Jia et al. · Journal of The Electrochemical Society · 2006 · 39 citations

Wide-bandgap Semiconductor, Engineering, Wet Chemical Etching +16

Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition

Jing Wang, L. W. Guo, Hai Qiang Jia et al. · Japanese Journal of Applied Physics · 2005 · 24 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +13

High-quality GaNAs∕GaAs quantum wells with light emission up to 1.44μm grown by molecular-beam epitaxy

Shuai Wang, Qinfen Gu, Y.Q. Wei et al. · Applied Physics Letters · 2005 · 12 citations

Critical Thickness, Engineering, Optoelectronic Devices +18