In situ

${I} - {V}$

and

${C}\!\!-\!\!{V}$

measurements were performed during the 120 MeV Au

$^{9+}$

ion irradiation on the Pt/Al

$_{{2}}\text{O}_{{3}}/\beta $

-Ga ₂ O ₃ , metal–oxide–semiconductor capacitors (MOSCAPs), to comprehend the swift heavy ion (SHI)-induced effects at the interface and in the device performance. At a maximum fluence of

$2\times 10^{{12}}$

ions/cm ² , the

${I}-\!{V}$

data showed a rise in the reverse leakage current by four orders of magnitude compared to the pristine device. The trap level (below the conduction band of Al ₂ O ₃₎ from Poole–Frenkel emission exhibits a variation from

$\sim $

1.1 to 0.91 eV. The conduction band offset

${(\phi }_{B}{) }$

of Al

$_{{2}}\text{O}_{{3}}/\beta $

-Ga ₂ O ₃ changes from 1.48 to 1.25 eV as estimated under the Fowler–Nordheim tunneling mechanism. In situ

${C}\!\!-\!\!{V}$

measurements show a significant shift in the flat band voltages and increased oxide in the border and interface due to charge trapping. The X-ray photoelectron spectroscopy (XPS) measurements of Al 2p and O 1s core levels revealed the pre-existing oxygen defects in Al ₂ O ₃ , which increase with fluence. The deconvoluted peaks of Al 2p at 74.6 eV designated to Al-sub oxide and the O 1s peak variation in the FWHM signifies the increase in the O defects. Cross-sectional transmission electron microscopy (XTEM) measurements on the irradiated device (at

$2\times 10^{{12}}$

ions/cm

$^{{2}}{)}$

revealed a modulated interface of Al

$_{{2}}\text{O}_{{3}}/\beta $

-Ga ₂ O ₃ and the formation of an interlayer of

$\sim $

4 nm Al _x Ga _y O _z . The scanning transmission electron microscope (STEM)-based high-angle annular dark-field imaging (HAADF) energy-dispersive X-ray spectroscopy (EDS) mapping revelation and the depth profiles of XPS data confirm the formation of an Al _x Ga _y O _z interlayer.

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