T. A. Lafford

Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

P. D. Kirsch, Manuel Quevedo-López, H. -J. Li et al. · Journal of Applied Physics · 2006 · 118 citations

Engineering, X-ray Reflectivity, Thin Film Process Technology +20

Combined surface Brillouin scattering and x-ray reflectivity characterization of thin metallic films

M.G. Beghi, C. E. Bottani, P.M. Ossi et al. · Journal of Applied Physics · 1997 · 56 citations

Engineering, Acoustic Metamaterial, Mechanical Engineering +23

Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment

Paolo Colombi, D. K. Agnihotri, Elza Bontempi et al. · Journal of Applied Crystallography · 2008 · 52 citations

X-ray Spectroscopy, Engineering, Synchrotron Radiation Source +19

Synchrotron Bragg diffraction imaging characterization of synthetic diamond crystals for optical and electronic power device applications

Thu Nhi Tran Thi, J. Morse, Damien Caliste et al. · Journal of Applied Crystallography · 2017 · 51 citations · Full text

Segregation, precipitation and dislocation generation between seeds in directionally solidified mono-like silicon for photovoltaic applications

M.G. Tsoutsouva, V.A. Oliveira, D. Camel et al. · Journal of Crystal Growth · 2013 · 49 citations

Materials Science, Engineering, Dislocation Interaction +9