In recent CMOS technology, extreme shrinking of contact area at source/drain regions raises serious concerns of high metal/semiconductor contact resistance. Confronting this problem, we introduce a precontact amorphization implantation plus Ti silicidation technique (PCAI + TiSi _x ) and achieve ultralow contact resistivity (ρ _c ) of (1.3 - 1.5) × 10 ^-9 Ω · cm ² on Si:P. This PCAI + TiSi _x technique utilizes light amorphization (low-energy implantation), thin Ti and TiSi _x film, and moderate thermal budget (500°C-550°C): these features are compatible with modern CMOS manufacturing. Moreover, the PCAI + TiSi _x -induced ρ _c reduction is proved universal on both n- and p-Si. With additional characterizations, we find that the silicidation-induced ρ _c variation is not merely a Schottky barrier height tuning effect. The electrical and physical characterizations suggest that the low ρ _c is strongly correlated with the formation of interfacial TiSi _x crystallites between amorphous TiSi alloy and Si.

#	Concept	H-Index	Publications	Citations
1	Engineering	1	1	52
2	Applied Physics	1	1	52
3	Electrical Engineering	1	1	52
4	Materials Engineering	1	1	52
5	Materials Science	1	1	52

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