Guoguo Yan

Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC

Feng Zhang, Guosheng Sun, Zheng Liu et al. · Journal of Applied Physics · 2013 · 46 citations

Aluminium Nitride, Engineering, Thin Film Process Technology +18

Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates

Lin Dong, Guosheng Sun, Jun Yu et al. · Applied Surface Science · 2013 · 36 citations

Materials Engineering, Materials Science, Engineering +10

Atomic Layer Deposition of BiFeO₃ Thin Films Using β-Diketonates and H₂O

Feng Zhang, Guosheng Sun, Wanshun Zhao et al. · The Journal of Physical Chemistry C · 2013 · 35 citations

Magnetic Properties, Engineering, Thin Film Process Technology +17

The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition

Jun Chen, Bowen Lv, Feng Zhang et al. · Materials Science in Semiconductor Processing · 2019 · 24 citations

Materials Science, Aluminium Nitride, Engineering +10

High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET

Zhanwei Shen, Feng Zhang, Guoguo Yan et al. · IEEE Transactions on Electron Devices · 2020 · 20 citations

Device Modeling, Reverse-channel 4H-sic Umosfet, Electrical Engineering +12