V. Osinniy

Extremely low temperature growth of ZnO by atomic layer deposition

E. Guziewicz, I.A. Kowalik, M. Godlewski et al. · Journal of Applied Physics · 2008 · 237 citations

Engineering, Crystal Growth Technology, Zinc Oxide +16

Investigation of epitaxial LaNiO3−x thin films by high-energy XPS

S. Mickevičius, S. Grebinskij, V. Bondarenka et al. · Journal of Alloys and Compounds · 2006 · 230 citations · Full text

Engineering, Oxide Electronics, Applied Physics +4

Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition

N. Huby, S. Ferrari, E. Guziewicz et al. · Applied Physics Letters · 2008 · 119 citations

Engineering, Oxygen Vacancy Formation, Zinc Oxide +19

Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

E. Katsia, N. Huby, G. Tallarida et al. · Applied Physics Letters · 2009 · 75 citations · Full text

Engineering, Energy Band Diagram, Semiconductor Materials +17

The influence of growth temperature and precursors’ doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique

T. Krajewski, E. Guziewicz, M. Godlewski et al. · Microelectronics Journal · 2008 · 53 citations