Low-temperature growth of In₂O₃ films was demonstrated at 70-250 °C by plasma-enhanced atomic layer deposition (PEALD) using a newly synthesized liquid indium precursor, dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me₂In(EDPA)), and O₂ plasma for application to high-mobility thin film transistors. Self-limiting In₂O₃ PEALD growth was observed with a saturated growth rate of approximately 0.053 nm/cycle in an ALD temperature window of 90-180 °C. As-deposited In₂O₃ films showed negligible residual impurity, film densities as high as 6.64-7.16 g/cm³, smooth surface morphology with a root-mean-square (RMS) roughness of approximately 0.2 nm, and semiconducting level carrier concentrations of 10¹⁷-10¹⁸ cm^-3. Ultrathin In₂O₃ channel-based thin film transistors (TFTs) were fabricated in a coplanar bottom gate structure, and their electrical performances were evaluated. Because of the excellent quality of In₂O₃ films, superior electronic switching performances were achieved with high field effect mobilities of 28-30 and 16-19 cm²/V·s in the linear and saturation regimes, respectively. Furthermore, the fabricated TFTs showed excellent gate control characteristics in terms of subthreshold swing, hysteresis, and on/off current ratio. The low-temperature PEALD process for high-quality In₂O₃ films using the developed novel In precursor can be widely used in a variety of applications such as microelectronics, displays, energy devices, and sensors, especially at temperatures compatible with organic substrates.

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