Namig Hasanov

InGaN/GaN light-emitting diode with a polarization tunnel junction

Zi‐Hui Zhang, Swee Tiam Tan, Zabu Kyaw et al. · Applied Physics Letters · 2013 · 111 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Zi‐Hui Zhang, Swee Tiam Tan, Wei Liu et al. · Optics Express · 2013 · 61 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

Zheng Ju, W. Liu, Zufa Zhang et al. · Applied Physics Letters · 2013 · 50 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering

Zi‐Hui Zhang, Zhengang Ju, Wei Liu et al. · Optics Letters · 2014 · 50 citations

Engineering, Electrical Engineering, Materials Engineering +17

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

Zhen Gang Ju, Wei Liu, Zi‐Hui Zhang et al. · ACS Photonics · 2014 · 46 citations

Engineering, Electrical Engineering, Materials Science +17