Y.-H. Zhang

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

H. S. Kim, O. O. Cellek, Zhi-Yuan Lin et al. · Applied Physics Letters · 2012 · 143 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

Preston T. Webster, Nathaniel A. Riordan, S. Liu et al. · Journal of Applied Physics · 2015 · 95 citations

Engineering, Absorption Spectroscopy, Spectroscopic Property +25

Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

X. Liu, David J. Smith, Jinchen Fan et al. · Applied Physics Letters · 2011 · 92 citations

Materials Science, Ii-vi Semiconductor, Structural Properties +14

The variable stripe-length method revisited: Improved analysis

C. Lange, M. Schwalm, Sangam Chatterjee et al. · Applied Physics Letters · 2007 · 64 citations

Optical Materials, Engineering, Laser Science +27

A semi-analytical model for semiconductor solar cells

D. Ding, S. R. Johnson, Shui-Qing Yu et al. · Journal of Applied Physics · 2011 · 56 citations

Device Modeling, Multi-junction Solar Cells, Electrical Engineering +15