Jia-Sheng Diao

The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers

Yuanwen Zhang, Yu Lei, Kai Li et al. · Superlattices and Microstructures · 2015 · 51 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +7

The Advantages of AlGaN-Based Ultraviolet Light-Emitting Diodes With Al Content Graded AlGaN Barriers

Yue Shen, Yuanwen Zhang, Lei Yu et al. · Journal of Display Technology · 2015 · 14 citations

Aluminium Nitride, Electrical Engineering, Ultraviolet Leds +13

Effect of Mg Doping in GaN Interlayer on the Performance of Green Light-Emitting Diodes

Jun Zhang, Xiang-Jing Zhuo, Danwei Li et al. · IEEE Photonics Technology Letters · 2014 · 13 citations

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +14

Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells

Xiang-Jing Zhuo, Jun Zhang, Danwei Li et al. · Optics Communications · 2014 · 11 citations

Electrical Engineering, Solid-state Lighting, Engineering +8