The area, temperature (160–300 K), and bias polarity dependences of the I – V curves of the self-rectifying n ⁺ Si-HfO ₂ –Ni resistance random access memory (RRAM) have been measured systematically. The complementary nonrectifying p ⁺ Si-HfO ₂ –Ni RRAM I – V data are also provided for reference. To explain all experimental data, three resistances in series in the RRAM device: 1) the Si-HfO ₂ contact resistance R

\(_{\mathrm {Si-HfO}}\)

; 2) the HfO ₂ dielectric resistance R _HfO ; and 3) the HfO ₂ –

\(Ni\)

contact resistance R _HfO-Ni must be considered on an equal footing. Previously reported first principle calculation results for the density of states of the monoclinic HfO ₂ grain boundary with high and low densities of oxygen vacancy V

\(_{O}^{0}\)

are adopted for describing the conductive filament resistance R _HfO of the dielectric at low- and high-resistance states. The temperature dependence of I – V is controlled by three different energy barriers: Schottky-like barrier, multiphonon trap assisted tunneling barrier, and multiphonon deep trap capture barrier ( E _CAPTURE ). It is demonstrated that all experimental data can be explained in a natural and unified way. This model is valuable not only for understanding the conduction mechanism, but also for guiding the future self-rectifying RRAM technology development.

#	Concept	H-Index	Publications	Citations
1	Engineering	1	1	17
2	Applied Physics	1	1	17
3	Electrical Engineering	1	1	17
4	Physics	1	1	17
5	Condensed Matter Physics	1	1	17

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