21:I[432972,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/30036bedc5269936.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/cd5e572bc3e4eb92.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/959ed6555b8dc5ff.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/d4ac9dcf27f6ff52.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 22:T43d,This paper focuses on the photoelectric properties of heterostructures formed by surface-modified Si (111) and hexagonal, quintuple-layered selenides (Bi₂Se₃ and Sb₂Te₃). It was shown that H-passivated Si (111) can form robust Schottky junctions with either Bi₂Se₃ or Sb₂Te₃. When back illuminated (i.e., light incident towards the Si side of the junction), both the Bi₂Se₃/Si and Sb₂Te₃/Si junctions exhibited significant photovoltaic response at 1030 nm, which is right within the near-infrared (NIR) light wavelength range. A maximum external quantum efficiency of 14.7% with a detection response time of 2 ms for Bi₂Se₃/Si junction, and of 15.5% with a 0.8 ms response time for the Sb₂Te₃/Si junction, were achieved. Therefore, utilizing Si constituents as high-pass filters, the Bi₂Se₃ (Sb₂Te₃)/Si heterojunctions can serve as monochromatic NIR photodetectors.

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2	Medicine	1	1	12
3	Allergy	1	1	12
4	Applied Physics	1	1	129
5	Materials Science	1	1	129

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