In this article, we investigate the extent of lifetime degradation attributed to lightand elevated-temperature-induced degradation (LeTID)inp-type multicrystalline silicon wafers passivated with different configurations of hydrogenated silicon nitride (SiN _x :H) and aluminum oxide (AlO _x :H). We also demonstrate a significant difference between AlO _x :H layers grown by atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) with respect to the extent of LeTID. When ALD AlO _x :H is placed underneath a PECVD SiN _x :H layer, as used in a passivated emitter and rear solar cell, a lower extent of LeTID is observed compared with the case when a single PECVD SiN _x :H layer is used. On the other hand, the LeTID extent is significantly increased when an ALD AlO _x :H is grown on top of the PECVD SiN _x :H film. Remarkably, when a PECVD AlO _x :H is used underneath the PECVD SiN _x :H film, an increase in the LeTID extent is observed. Building on our current understanding of LeTID, we explain these results with the role of ALD AlO _x :H in impeding the hydrogen diffusion from the dielectric stack into the c-Si bulk, while PECVD AlO _x :H seems to act as an additional hydrogen source. These observations support the hypothesis that hydrogen is playing a key role in LeTID and provide solar cell manufacturers with a new method to reduce LeTID in their solar cells.

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