22:T464,Perovskite solar cells (PSCs) via two-step sequential method have received great attention in recent years due to their high reproducibility and low processing costs. However, the relatively high trap-state density and poor charge carrier extraction efficiency pose challenges. Herein, highly efficient and stable PSCs via a two-step sequential method are fabricated using organic-inorganic (OI) complexes as multifunctional interlayers. In addition to reduce the under-coordinated Pb²⁺ ions related trap states by forming interactions with the functional groups, the complexes interlayer tends to form dipole moment which can enhance the built-in electric field, thus facilitating charge carrier extraction. Consequently, with rational molecular design, the resulting devices with a vertical dipole moment that parallels with the built-in electric field yield a champion efficiency of 23.55% with negligible hysteresis. More importantly, the hydrophobicity of the (OI) complexes contributes to an excellent ambient stability of the resulting device with 91% of initial efficiency maintained after 3000 h storage.23:T4d5,Sn-Ge mixed perovskites have been proposed as promising lead-free candidates in the photovoltaics (PV) field. In this work, we discovered a stable P1 phase Sn-Ge mixed structure (CsSn_0.5Ge_0.5I₃) with an appropriate band gap value of 1.19 eV, which manifests its unique structural stability and physics properties. The thermodynamic stability of this mixed structure under different growth conditions and all possible native defects are depicted in detail. The formation energies and dominant native point defects indicate that P1 phase CsSn_0.5Ge_0.5I₃ exhibits unipolar self-doping behavior (p-type conductivity) and good defect tolerance while the growth condition changes. In addition, the calculation of light absorption confirmed that the P1 phase has a higher light absorption coefficient than that of MAPbI₃ in the visible light range, showing excellent light absorption. Our work not only provides theoretical guidance for unraveling the unusual structural stability of Sn-Ge mixed perovskites, but also offers a useful scheme to modulate the stability and optoelectronic properties of Ge-based perovskites through alloy engineering.24:T553,Vacancy defects are universally regarded to be the main defect that limits the photoelectric conversion efficiency of perovskite solar cells. In perovskite, iodine vacancy dominates the defect proportion due to its low formation energy. However, the defect property of iodine vacancy (VI) is still in dispute. Ideally, the VI defect is considered to be a shallow level defect near conduction band minimum, meaning that it does not act as a Shockley–Read–Hall (SRH) nonradiative recombination center. Herein, we find a direct correlation between compressive strain and VI defect behavior. The compressive strain along the lattice vector b/c direction will drive the VI defect from shallow level to deep level defect, which is related to the formation of Pb-dimer. In addition, the influence of extra electrons is also considered during the structural evolution of VI, which is often observed in the experiments. Therefore, we find that the elimination of compressive strain and extra electrons can be of great significance for improving the photoelectric performance of perovskite solar cells. Our work reveals the defect properties of VI from shallow level one to the SRH recombination center and the inherent physics mechanism of defect evolution under external factors, which provides a strategy to control device defects and eliminate recombination losses.

#	Concept	H-Index	Publications	Citations
1	Engineering	3	3	117
2	Applied Physics	3	3	117
3	Materials Science	3	3	117
4	Materials Engineering	1	1	18
5	Physics	1	1	18

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