25:T543,Wide-bandgap (WBG) perovskite solar cells (PSCs, E_g > 1.6 eV), serving as the top cell in perovskite/silicon tandem solar cells (PSTSCs), play an indispensable role in absorbing high energy photons and increasing overall efficiency. However, WBG PSCs often suffer from severe light-induced phase segregation and significant non-radiative recombination losses due to uncontrolled rapid crystallization. Here, polyfluoride molecular additives are designed and incorporated via (diacetoxyiodo)benzene into WBG perovskite, to regulate crystallization process of perovskite films and thereby reduce defects. (Bis(trifluoroacetoxy)iodo)benzene (BTFIB) can passivate uncoordinated lead ions and iodide vacancies, thereby inhibiting phase separation caused by iodide migration and reducing non-radiative recombination loss during charge transport. Moreover, the introduction of BTFIB can effectively moderate the film formation process and confer excellent hydrophobic properties to the films. Consequently, BTFIB-based 1.67 eV-WBG perovskite devices yield a champion efficiency of 23.05% (certified efficiency of 22.21%), enabling a 31.20% efficiency in four-terminal PSTSCs, along with excellent open-circuit voltage of 1.246 V and fill factor of 85.34%. After 2500 h of aging in a glovebox, the device retained 80% of its initial efficiency.26:T4d3,Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p-n junction WSe₂/MoS₂ produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm²/(V·s). In addition, the photodetector based on MoS₂/WSe₂ heterostructures displays outstanding optoelectronic properties (R = 8 A/W, D* = 2.93 × 10¹¹ Jones, on/off ratio of 10⁴), which benefited from the built-in electric field across the interface. The direct growth of TMDs p-n vertical heterostructures may offer a novel platform for future optoelectronic applications.27:T433,High-index semiconductor nanoantennae represent a powerful platform for nonlinear photon generation. Devices with reduced footprints are pivotal for higher integration capacity and energy efficiency in photonic integrated circuitry (PIC). Here, we report on a deep subwavelength nonlinear antenna based on dilute nitride GaNP nanowires (NWs), whose second harmonic generation (SHG) shows a 5-fold increase by incorporating ∼0.45% of nitrogen (N), in comparison with GaP counterpart. Further integrating with a gold (Au) thin film-based hybrid cavity achieves a significantly boosted SHG output by a factor of ∼380, with a nonlinear conversion efficiency up to 9.4 × 10^-6 W^-1. In addition, high-density zinc blende (ZB) twin phases were found to tailor the nonlinear radiation profile via dipolar interference, resulting in a highly symmetric polarimetric pattern well-suited for coupling with polarization nano-optics. Our results manifest dilute nitride nanoantenna as promising building blocks for future chip-based nonlinear photonic technology.28:T637,

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