Kyoungwan Park

A 50-nm-gate-length erbium-silicided <i>n</i>-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Moongyu Jang, Yarkyeon Kim, Jae‐Heon Shin et al. · Applied Physics Letters · 2004 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

Characteristics of erbium-silicided <i>n</i>-type Schottky barrier tunnel transistors

Moongyu Jang, Jihun Oh, Sunglyul Maeng et al. · Applied Physics Letters · 2003 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

Simulation of Schottky barrier tunnel transistor using simple boundary condition

Moongyu Jang, Kicheon Kang, Seongjae Lee et al. · Applied Physics Letters · 2003 · 27 citations

Engineering, Electrical Engineering, Microelectronics +16

Annealing effects on the photoluminescence of amorphous silicon-nitride films

Changhun Ko, Jiho Joo, Moonsup Han et al. · Journal of the Korean Physical Society · 2006 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +12

Er 3+ photoluminescence from Er-doped amorphous SiOx films prepared by pulsed laser deposition at room temperature: The effects of oxygen concentration

Jeong Sook Ha, Chang Hyun Bae, Sang Hwan Nam et al. · Applied Physics Letters · 2003 · 22 citations

Natural Sciences, Materials Engineering, Materials Science +16