Yegang Lv

Improved thermal and electrical properties of Al-doped Ge₂Sb₂Te₅ films for phase-change random access memory

Guoxiang Wang, Xiang Shen, Qiuhua Nie et al. · Journal of Physics D Applied Physics · 2012 · 51 citations

Engineering, Materials Engineering, Physics +17

Advantages of Zn1.25Sb2Te3 material for phase change memory

Guoxiang Wang, Qiuhua Nie, Xiang Shen et al. · Materials Letters · 2012 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +13

Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer

Sannian Song, Zhitang Song, Cheng Peng et al. · Nanoscale Research Letters · 2013 · 14 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Advantages of Mo4.9(Sb2Te)95.1 film with improved crystallization properties for phase change memory

Hui Wang, Guoxiang Wang, Yimin Chen et al. · Materials Letters · 2015 · 10 citations

Natural Sciences, Materials Engineering, Materials Science +14