James T. Gibbon

Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

Jack E. N. Swallow, Joel B. Varley, Leanne A. H. Jones et al. · APL Materials · 2019 · 83 citations · Full text

Engineering, Surface Vbm, Chemistry +19

Core Levels, Band Alignments, and Valence-Band States in CuSbS₂ for Solar Cell Applications

Thomas J. Whittles, T. D. Veal, Christopher N. Savory et al. · ACS Applied Materials & Interfaces · 2017 · 82 citations · Full text

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Naser Sedghi, Hongfei Li, I. F. Brunell et al. · Applied Physics Letters · 2017 · 75 citations · Full text

Materials Science, Non-volatile Memory, Electrical Engineering +12

Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu₃BiS₃ for Photovoltaics

Thomas J. Whittles, T. D. Veal, Christopher N. Savory et al. · ACS Applied Materials & Interfaces · 2019 · 64 citations

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Joseph W. Roberts, Paul R. Chalker, Boning Ding et al. · Journal of Crystal Growth · 2019 · 62 citations · Full text

Materials Science, Optical Materials, Engineering +7