Y.-H. Zhang

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Elizabeth H. Steenbergen, Blair C. Connelly, Grace D. Metcalfe et al. · Applied Physics Letters · 2011 · 306 citations

Engineering, Materials Engineering, Materials Science +17

Large <i>g</i>-factor enhancement in high-mobility InAs/AlSb quantum wells

Yu. G. Sadofyev, Ayyalusamy Ramamoorthy, Ban A. Naser et al. · Applied Physics Letters · 2002 · 53 citations

Natural Sciences, Materials Science, Physics +17

Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

Preston T. Webster, Nathaniel A. Riordan, S. Liu et al. · Applied Physics Letters · 2015 · 46 citations

Natural Sciences, Materials Science, Physics +17

GaAsSb/GaAs band alignment evaluation for long-wave photonic applications

S. R. Johnson, Chengchen Guo, S. A. Chaparro et al. · Journal of Crystal Growth · 2003 · 43 citations

Engineering, Electrical Engineering, Materials Science +13

MBE growth of II–VI materials on GaSb substrates for photovoltaic applications

Shurong Wang, D. Ding, Xiao Liu et al. · Journal of Crystal Growth · 2008 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +13